Temperature dependence of capacitance of Si quantum dot floating gate MOS capacitor

Voltage- and Temperature-Dependent Gate Capacitance and Current Model: Application to ZrO2 n-channel MOS Capacitor

Based on the energy-dispersion relation in each region of the gate-dielectric-silicon system, a tunneling model is developed to understand the gate current as a function of voltage and temperature. The gate capacitance is self-consistently calculated from Schrödinger and Poisson equations subject to the Fermi–Dirac statistics, using the same band structure in the silicon as used for tunneling i...

Floating-gate Mos Synapse Transistors

Transport in Split Gate MOS Quantum Dot Structures

A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy lev...

Extraction of Mos Capacitance in Fowler-nordheim Regime Using the Floating Gate Technique

The floating gate technique (FGT) is a very sensitive method to measure very low level leakage currents in MOS capacitors. This indirect technique requires the precise knowledge of the capacitance of the structure under test. We have studied the impact of the capacitance model (classic or quantum) and of polysilicon gate depletion effect. We have shown that for 7.2 nm thin EEPROM tunnel oxides,...

Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide

A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO2 and SiO2 tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C–V hysteresis curves,...